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| www..com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF20P10J 20 AMP /100 Volts 200 m P-Channel MOSFET Features: * * * * * * * * Rugged construction with polysilicon gate Low ON-resistance and high transconductance Excellent high temperature stability Hermetically Sealed, Isolated Package Low Total Gate Charge Fast Switching replacement for IRF9140 types TX, TXV, S-Level screening available DESIGNER'S DATA SHEET TO-257 Maximum Ratings Drain - Source Voltage Gate - Source Voltage Max. Continuous Drain Current (package limited) Max. Avalanche current Repetitive Avalanche Energy Single Pulse Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE Symbol VDSS VGS @ TC = 25C @ TC = 100C @ L= 0.1 mH @ L= 0.1 mH @ L= 0.1 mH @ TC = 25C ID1 ID2 IAR EAR EAS PD TOP & TSTG R0JC Value -100 20 20 11 20 12.5 500 100 -55 to +150 1.25 Units V V A A mJ mJ W C C/W SUFFIX JDB SUFFIX JUB NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0012A DOC www..com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF20P10J Symbol VGS = 0V, ID = 1 mA VGS = 10V, ID = 11A, Tj= 25oC VGS = 10V, ID = 20A, Tj= 25oC VDS = VGS, ID = 250A VGS = 20V VDS = -80V, VGS = 0V, Tj = 25oC VDS = -80V, VGS = 0V, Tj = 125oC VDS = 10V min, ID = 11A, Tj = 25oC VGS = 10V VDS = 50V ID = 18A VGS = 10V VDS = 50V ID = 18A RG = 9.1 IF = 20A, VGS = 0V IF = 20A, di/dt = 100A/usec VGS = 0V VDS = 25V f = 1 MHz BVDSS RDS(on) VGS(th) IGSS IDSS gfs Qg Qgs Qgd td(on) tr td(off) tf VSD trr Qrr Ciss Coss Crss Electrical Characteristics 4/ Drain to Source Breakdown Voltage Drain to Source On State Resistance Gate Threshold Voltage Gate to Source Leakage Zero Gate Voltage Drain Current Forward Transconductance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn on Delay Time Rise Time Turn off Delay Time Fall Time Diode Forward Voltage Diode Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance NOTES: * Pulse Test: Pulse Width = 300sec, Duty Cycle = 2%. 4/ Unless Otherwise Specified, All Electrical Characteristics @25oC. Min -100 -- -- -2.0 -- -- -- 6 -- -- -- -- -- -- -- -- -- -- -- -- Typ Max -- 140 150 -- 5 0.01 0.75 55 55 12 29 30 27 70 45 1.90 270 2 1400 600 180 -- 200 230 -4.0 100 25 250 -- 70 15 45 35 85 85 65 4.20 350 3.6 1650 740 260 Units V m V nA A A Mho nC nsec V nsec C pF NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0012A DOC |
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